Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale
نویسندگان
چکیده
منابع مشابه
Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale
Charge transport measurements form an essential tool in condensed matter physics. The usual approach is to contact a sample by two or four probes, measure the resistance and derive the resistivity, assuming homogeneity within the sample. A more thorough understanding, however, requires knowledge of local resistivity variations. Spatially resolved information is particularly important when study...
متن کاملLow-energy electron potentiometry.
In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucial for a detailed understanding of electronic transport in realistic devices. Recently, we have introduced a new potentiometry method based on low-e...
متن کاملCalculation of the Electron Self Energy for Low Nuclear Charge
We present a nonperturbative numerical evaluation of the one-photon electron self energy for hydrogenlike ions with low nuclear charge numbers Z = 1 to 5. Our calculation for the 1S state has a numerical uncertainty of 0.8 Hz for hydrogen and 13 Hz for singly-ionized helium. Resummation and convergence acceleration techniques that reduce the computer time by about three orders of magnitude were...
متن کاملa study on the effectiveness of task types (noticing-reformulation) on iranian low intermediate efl learners’ retention of collocations
چکیده پژوهش شبه تجربی حاضر به بررسی بکارگیری تمارین کلاسی که برانگیزنده آگاهی و توجه آگاهانه به همایندها بعنوان بخشی از یک دوره ی مکالمه زبان خارجی در یکی از آموزشگاه های زبان انگلیسی ایران است می پردازد.
Charge induced pattern distortion in low energy electron beam lithography
Charge induced pattern distortions in low voltage electron beam lithography in the energy range of 1 to 5 kV were investigated. Pattern distortion on conducting substrates such as silicon was found to be small, while significant pattern placement errors and pattern distortions were observed in the case of electrically insulating substrates caused by charge trapping and deflection of the inciden...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep13604